Taiwanese memory chipmaker Nanya Technology said on July 10 it plans capital spending of more than NT$200 billion (US$6.22 billion) next year, to ramp up a new plant as AI-related demand boosts the memory market.

The preliminary budget still requires board approval.

Nanya expects to spend more than NT$50 billion (US$1.56 billion) this year. President Pei-Ing Lee said total investment in the new plant would reach about NT$480 billion (US$14.9 billion) at full production capacity.

The first phase is scheduled to reach 30,000 wafers a month in 2028 before expanding to 45,000.

The fab is being built in New Taipei City’s Nanlin Technology Park for several generations of Nanya’s 10nm-class dynamic random-access memory (DRAM) process.

Nanya is developing high-bandwidth memory (HBM) products for customized AI devices rather than AI servers.

Nanya also reported unaudited second-quarter revenue of NT$82.55 billion (US$2.57 billion), up 684% year on year. Net income rose 1,324% to NT$50.19 billion (US$1.56 billion).

🔗 Source: Reuters