SK hynix said it has supplied 12-layer samples of its new HBM4E high-bandwidth memory to customers. The move comes as demand rises for chips used in AI training and inference.

The company said the 12-layer product delivers up to 16 gigabits per second (Gbps) per pin, 48GB of capacity, more than 20% better energy efficiency than HBM4.

SK hynix added that its mass reflow molded underfill (MR-MUF) process improves structural stability. It cuts thermal resistance by about 17% as it works with customers toward mass production.

SK hynix held a 62% share of global HBM shipments in the second quarter of 2025, according to industry estimates. Samsung said on May 29 it had begun shipping 12-layer HBM4E samples.

Nvidia has certified the three memory suppliers for HBM4 for its Vera Rubin platform. Initial system shipments expected later in 2026.

🔗 Source: SK hynix

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