Samsung Electronics said on May 29 it had begun shipping samples of its 12-layer HBM4E high-bandwidth memory to major customers, expanding its memory offerings for AI computing and hyperscale infrastructure.

The chip has 48GB of capacity and bandwidth of up to 3.6TB/s per stack.

Samsung said it was more than 20% faster than HBM4 and had more than 30% more capacity than the previous generation.

Samsung said it planned to begin mass production after sample shipments and optimization.

Next-generation AI accelerators, including Nvidia’s Rubin, are expected to use HBM4-class memory.

The announcement came after SK hynix said in March 2025 that it had shipped samples of 12-layer HBM4 and was preparing for mass production in the second half of 2025.

In Q2 2025, SK hynix held 62% of the high-bandwidth memory market vs. Samsung’s 17%, according to a market note that cited Counterpoint Research.

🔗 Source: Samsung Electronics

Recent Samsung Electronics developments