Samsung Electronics said on July 27 that it plans to use its 2-nanometer process for the base die of its future eighth-generation high-bandwidth memory, or HBM5, for AI semiconductors.

In an interview published by Samsung Electronics’ Semiconductor Newsroom, foundry executive Koo Ja-geum said HBM5 is expected to process data more than 50% faster than HBM4E.

Samsung plans to use a 2nm Gate-All-Around base die and finer through-silicon vias (TSVs) to improve speed and power efficiency.

🔗 Source: Chosun Daily

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