Samsung Electronics plans to build a new dynamic random-access memory (DRAM) fab at its Giheung semiconductor campus with monthly capacity of 100,000 wafers, industry sources said.

The project could cost tens of trillions of won and construction could start as early as the third quarter of 2026.

Samsung shares rose more than 6% on July 15 after the report.

The move would be notable because Giheung, south of Seoul, is where Samsung produced the world’s first 64-megabit DRAM in 1992.

More recently, the campus has been developed as a semiconductor research and development hub, with its NRD-K complex reaching a milestone after breaking ground in 2022.

The reported fab would be separate from the NRD-K complex and reflects AI-driven demand for memory chips.

This includes server DRAM and high-bandwidth memory (HBM), as AI servers need more memory and HBM production uses more DRAM wafer capacity.

🔗 Source: Cailianshe

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