🧠 Food for thought

Implications, context, and why it matters.

Limited public disclosure on GlobalFoundries’ 200mm GaN process readiness for volume power production

• In recent updates, Onsemi and GlobalFoundries (GF) did not share reliability data or customer deployments for GF’s 200mm enhancement-mode (e‑mode) GaN-on-silicon platform, and they gave no detailed timeline 1. ROHM, a Japan-based power semiconductor maker, began mass production of 650V GaN in April 2023 and plans automotive-grade devices through Outsourced Semiconductor Assembly and Test (OSAT) partnerships 2.
• Onsemi targets the first half of 2026 (H1 2026) for sampling 1. GF has not shared yield data or thermal cycling results for the flow 1. Gate reliability specs also remain undisclosed, so the push to reach volume needs context with rivals that already ship 650V parts 12.

OSAT providers can capture GaN co-packaging opportunities in power modules

• Pairing GaN high-electron-mobility transistors (HEMTs) with silicon drivers needs strong thermal design and low-inductance packaging 2. OSAT specialists such as ATX Semiconductor, a packaging and test provider, build ROHM’s 650V GaN in Transistor Outline Leadless (TOLL) packages for high heat dissipation, and others offer laser grooving or backside metallization with titanium–nickel–silver (Ti‑Ni‑Ag) plus compact Dual Flat No-Lead (DFN) or Quad Flat No-Lead (QFN) assembly for AI datacenter or EV power designs 32.
• Co-packaged GaN modules place GaN power devices beside silicon drivers or controllers in one package 4. These modules raise demand for silver sinter pastes and high-conductivity die attach, which are bonding materials that improve thermal performance 4. UK projects such as GaNSIC, a research initiative for wide-bandgap semiconductors (materials such as GaN and silicon carbide that enable efficient operation at high voltages), continue development 4. Adoption is expected to accelerate in 2026 in automotive onboard chargers and industrial motor drives 2.