ChangXin Memory Technologies, a Chinese producer of dynamic random access memory chips, has successfully manufactured 16-nanometre technology.

This advancement aims to reduce the technology gap with global leaders such as Samsung Electronics, SK Hynix, and Micron Technology.

TechInsights reports that CXMT has produced a 16-gigabit DRAM chip using this advanced node, featuring DDR5 technology, which is expected to dominate the market until at least 2027.

The chip measures around 67 square millimeters, achieving a storage density of 0.239 Gb per square millimeter.

CXMT’s new G4 DRAM includes memory cells that are 20% smaller than its previous G3 generation.

The company has made notable progress since its earlier nodes, with its G1 at 23nm and G2 at 18nm.