Rapidus Corporation has begun prototyping its 2nm gate-all-around (GAA) transistors at the IIM-1 foundry in Japan.

The company confirmed that prototype wafers have started to show electrical characteristics.

The IIM-1 facility, established in September 2023, has installed over 200 advanced semiconductor tools as of June 2025.

It uses single-wafer front-end processing and extreme ultraviolet (EUV) lithography for next-generation semiconductor production.

Rapidus plans to release a Process Development Kit for its 2nm process by the first quarter of 2026. Mass production at IIM-1 is scheduled to begin in 2027.

🔗 Source: Rapidus

🧠 Food for thought

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